 Sat Oct 8 12:39:41 2022, Patrick Sieberer, ramon + tracker + DUT, 40, RD50-MPW3, 252.7, , , , Unknown, lowflux high, , , , , , ,
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ASIC: TH 1320, noisy pixel masekd
BEAM ON
send to monitor: 10
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Wed Jan 20 17:12:15 2021, Felix Ulrich-Pur, Lowflux recommissioning, 4, Ramon+Tracker, 145.4, , , 30 spills, , 10%, , 10, 1, , , ,
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Rate |
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Sat Feb 27 09:29:41 2021, Felix Ulrich-Pur, Rate verification, 4, SiC+Si+RaMon, 252.7, III(EFE+SID2), , , Good, , , , , , , ,
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Start 06:55
reallocated correctly, rate looks similar to old measurements now (kHz ish)
channel 1 : Si upstream
channel 2: SiC downstream
400 V Bias
Referenz: 2.475V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1
position:
x: 0
y: 0 |
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Tue Mar 16 14:55:06 2021, Patrick Sieberer, Pad Sensoren, 4, , 252.7, III(EFE+SID2), Proton, , Good, , , , , , , none,
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Start: 07:30
Range Shifter Out, Filter 1 IN, Filter 2 IN
Before the run we went inside to: put scintillators behind the sensors, reset the fpga counters |
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Wed May 12 08:49:59 2021, Felix Ulrich-Pur, Alu 90deg, 4, Drehtisch, 100.4, II(BETA+EFE), Proton, , Good, , , , , , , Alu, 90
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TB 24.4.21
90deg (0.2-1cmAlu) |
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Sun Jun 20 19:34:59 2021, Felix Ulrich-Pur, HADES energy run, 4, HADES-LGADs, 252.7, I(EFE+SID0), Proton, , Good, , , , , , , none, 0
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TB 19.6.21
Start 17:13
Mean rate O(MHz)
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Sun Nov 7 18:52:55 2021, Felix Ulrich-Pur, Low flux test 7.11.21, 4, , 252.7, I(EFE+SID0), , 30 spills, Good, , , , , , , none,
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Start: 06:54 O(MHz) |
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Sun Nov 21 14:53:00 2021, Simon Waid, Comparison SiC, Si, Si LGAD and Diamond, 4, Diamond+LGAD, 62.4, I(EFE+SID0), Proton, 100000, , , , , , , , ,
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Bias voltage Diamond: 500
Bias voltage Si LGAD: -100
From a beam perspective the Diamond detector was the first target, on oscilloscope channel 4, the Si LGAD was the second target connected to oscilloscope channel 1.
Triggering source was the Si LGAD detector.
Data was stored on the HiBPM-Osci-2 NUC under c:\measurements |
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Sat Dec 11 17:48:08 2021, Felix Ulrich-Pur, Fluence loss 1cm, 4, DSSD-Tracker, 800, V, Proton, , Good, , , , , , , Alu, 0 deg
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Fluence loss measurement 11.12.2021
Start 15:15
0deg =1cm Alu |
Sat Oct 8 07:30:37 2022, Christian Irmler, testrun ramon + tracker + DUT, 4, RD50-MPW3, 800, , , , Unknown, lowflux high, , , , , , , 
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Tracker latency lat=42
RD50-MPW3 monitor connected first |
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Sun Jan 10 07:26:42 2021, Maximilian Tomaschek, Lowflux recommissioning, 39, Ramon+Tracker, 145.4, , , 7 spills 1e6 events, Good, , , 10, 1, , 0, ,
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Spotsize |
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Sat Oct 8 12:33:57 2022, Patrick Sieberer, ramon + tracker + DUT, 39, RD50-MPW3, 252.7, , , , Unknown, lowflux high, , , , , , ,
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ASIC: TH 1320, noisy pixel masekd
BEAM ON
Warning -> not sure, restart
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Sun Jan 10 07:26:31 2021, Maximilian Tomaschek, Lowflux recommissioning, 38, Ramon+Tracker, 175.3, , , 7 spills 1e6 events, Good, , , 10, 1, , 0, ,
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Spotsize |
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Thu Oct 7 11:13:46 2021, Philipp Gaggl, Pad Sensoren, 38, SiC+Si, , , , , Unknown, , , , , , , ,
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beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 1100 V
Noise measurement |
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Sat Oct 8 12:30:17 2022, Patrick Sieberer, ramon + tracker + DUT, 38, RD50-MPW3, 100.4, , , , Unknown, lowflux high, , , , , , ,
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ASIC: TH 1325, noisy pixel masekd
BEAM ON
send everything to monitor
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Sun Jan 10 07:26:16 2021, Maximilian Tomaschek, Lowflux recommissioning, 37, Ramon+Tracker, 194.3, , , 7 spills 1e6 events, Good, , , 10, 1, , 0, ,
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Spotsize |
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Thu Oct 7 11:13:21 2021, Philipp Gaggl, Pad Sensoren, 37, SiC+Si, 62.4, , Proton, , Unknown, , , 10, , , , ,
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beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 1100 V |
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Sat Oct 8 12:27:25 2022, Patrick Sieberer, ramon + tracker + DUT, 37, RD50-MPW3, 100.4, , , , Unknown, lowflux high, , , , , , ,
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ASIC: TH 1320, noisy pixel masekd
BEAM ON
send everything to monitor
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Sun Jan 10 07:24:46 2021, Maximilian Tomaschek, Lowflux recommissioning, 36, Ramon+Tracker, 252.7, , , 7 spills 1e6 events, Good, , , 10, 1, , 0, ,
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Spotsize |
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Thu Oct 7 11:13:05 2021, Philipp Gaggl, Pad Sensoren, 36, SiC+Si, 62.4, , Proton, , Unknown, , , 10, , , , ,
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beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 800 V |
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