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ID	Date	Author	Subject	Run Number	DUT	Beam Energy	Rate Setting	Particle Type	Events	Data	Beam Degrader
302	Sun Nov 21 13:51:53 2021	Simon Waid	Comparison SiC, Si, Si LGAD and Diamond	1	SiC+Si	62.4	I(EFE+SID0)	Proton	10000
Bias voltage SiC: 800 Bias voltage Si: -150 From a beam perspective the Si detector was the first target, on oscilloscope channel 1, SiC was the second target connected to oscilloscope channel 3. Triggering source was the SiC detector. Data was stored on the HiBPM-Osci-2 NUC under c:\measurements
303	Sun Nov 21 13:55:05 2021	Simon Waid	Comparison SiC, Si, Si LGAD and Diamond	2	SiC+Si	62.4	I(EFE+SID0)	Proton	1000000
Bias voltage SiC: 800 Bias voltage Si: -150 From a beam perspective the Si detector was the first target, on oscilloscope channel 1, SiC was the second target connected to oscilloscope channel 3. Triggering source was the Si detector. The compliancy of the SiC SMU triggered after approx. 50% of the events had been acquired after this event the HV for the SiC HV was shut down. Data was stored on the HiBPM-Osci-2 NUC under c:\measurements
304	Sun Nov 21 14:05:18 2021	Simon Waid	Comparison SiC, Si, Si LGAD and Diamond	3		62.4	I(EFE+SID0)	Proton	10000
Bias voltage SiC: 800 Bias voltage Si LGAD: -100 From a beam perspective the SiC detector was the first target, on oscilloscope channel 4, the Si LGAD was the second target connected to oscilloscope channel 1. Triggering source was the Si LGAD detector. The SiC detector was most probably defective. Data was stored on the HiBPM-Osci-2 NUC under c:\measurements
305	Sun Nov 21 14:53:00 2021	Simon Waid	Comparison SiC, Si, Si LGAD and Diamond	4	Diamond+LGAD	62.4	I(EFE+SID0)	Proton	100000
Bias voltage Diamond: 500 Bias voltage Si LGAD: -100 From a beam perspective the Diamond detector was the first target, on oscilloscope channel 4, the Si LGAD was the second target connected to oscilloscope channel 1. Triggering source was the Si LGAD detector. Data was stored on the HiBPM-Osci-2 NUC under c:\measurements
247	Thu Oct 7 10:51:38 2021	Philipp Gaggl	Pad Sensoren	12	SiC+Si	62.4	III(EFE+SID2)	Proton		Good
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 400 V Cividec for SiC
248	Thu Oct 7 10:54:33 2021	Philipp Gaggl	Pad Sensoren	13	SiC+Si	62.4	II(BETA+EFE)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 400 V
249	Thu Oct 7 10:56:59 2021	Philipp Gaggl	Pad Sensoren	14	SiC+Si	62.4	II(BETA+EFE)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 400 V Repeat of run 13
250	Thu Oct 7 10:57:31 2021	Philipp Gaggl	Pad Sensoren	15	SiC+Si	62.4	II(BETA+EFE)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 800 V Trigger SiC
251	Thu Oct 7 10:58:19 2021	Philipp Gaggl	Pad Sensoren	16	SiC+Si	62.4	II(BETA+EFE)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1000 V Trigger SiC
252	Thu Oct 7 10:58:47 2021	Philipp Gaggl	Pad Sensoren	17	SiC+Si	62.4	II(BETA+EFE)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1100 V Trigger SiC
253	Thu Oct 7 10:59:18 2021	Philipp Gaggl	Pad Sensoren	18	SiC+Si	62.4	II(BETA+EFE)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 400 V
254	Thu Oct 7 10:59:57 2021	Philipp Gaggl	Pad Sensoren	19	SiC+Si	62.4	II(BETA+EFE)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 600 V
255	Thu Oct 7 11:00:33 2021	Philipp Gaggl	Pad Sensoren	20	SiC+Si	62.4	I(EFE+SID0)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1100 V
256	Thu Oct 7 11:01:19 2021	Philipp Gaggl	Pad Sensoren	21	SiC+Si	62.4	I(EFE+SID0)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 800 V
257	Thu Oct 7 11:01:53 2021	Philipp Gaggl	Pad Sensoren	22	SiC+Si	62.4	I(EFE+SID0)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 600 V
258	Thu Oct 7 11:02:15 2021	Philipp Gaggl	Pad Sensoren	23	SiC+Si	100.4	I(EFE+SID0)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 600 V
259	Thu Oct 7 11:02:43 2021	Philipp Gaggl	Pad Sensoren	24	SiC+Si	100.4	I(EFE+SID0)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 800 V
260	Thu Oct 7 11:03:04 2021	Philipp Gaggl	Pad Sensoren	25	SiC+Si	100.4	I(EFE+SID0)	Proton		Unknown
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1100 V
261	Thu Oct 7 11:03:37 2021	Philipp Gaggl	Pad Sensoren	27	SiC+Si	120		Carbon		Unknown	10
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1100 V
262	Thu Oct 7 11:07:08 2021	Philipp Gaggl	Pad Sensoren	28	SiC+Si	402.8		Carbon		Unknown	10
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1100 V

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