Start 10:38
no signal in SiC

channel 1 : Si upstream
channel 2: SiC downstream

400 V Bias

Referenz: 2.100 V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1

position:

x = 8
y = 68

Start 10:47

channel 1 : Si upstream
channel 2: SiC downstream

400 V Bias

Referenz: 2.100 V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1

position:

x = 8
y = 68

Start 11:09

channel 1 : Si upstream
channel 2: SiC downstream

400 V Bias

Referenz: 2.100 V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1

position:

x = 8
y = 68

Start 11:36

schöne Signale

channel 1 : Si upstream
channel 2: SiC downstream

400 V Bias

Referenz: 2.100 V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1

position:

x = 8
y = 68

Start 11:55
Stopped at 12:05-->acc failure

channel 1 : Si upstream
channel 2: SiC downstream

400 V Bias

Referenz: 2.100 V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1

position:

x = 8
y = 68

Start 12:39

Neustart der vorherigen Messung

channel 1 : Si upstream
channel 2: SiC downstream

400 V Bias

Referenz: 2.100 V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1

position:

x = 8
y = 68

Start 13:40

Degrader 100 
Messung aufgenommen, keine Screenshots

channel 1 : Si upstream
channel 2: SiC downstream

400 V Bias

Referenz: 2.100 V channel 2, 0-Level: 2.310V channel 2
Referenz: 2.477V channel 1, 0-Level: 2.315V channel 1

position:

x = 8
y = 68

Start 16:15:
Final MT=1, final BSY length =500 (2kHz)

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 1100 V
Noise measurement

Start: 06:33 O(kHz)

Start: 06:40 O(100kHz)

Start: 06:46 O(MHz)

Start: 06:54 O(MHz)

Start: 07:01 O(MHz)

Start: 07:07 O(MHz)

Start: 07:13 O(100kHz)

Start: 07:20 O(100kHz)

Start: 07:26 O(100kHz)

Start: 07:33 O(kHz)

Start: 07:39 O(kHz)