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ID Date Author Subject Run Number DUT Beam Energy Rate Setting Particle Type Events Data Beam Betatron Beam Chopper Beam Degraderdown Beam EFE Beam Orb Beam QuadScan PhantomType PhantomAngle
  239   Sun Jun 20 19:55:47 2021 Felix Ulrich-PurHADES sandwich TOF reference run12HADES-LGADs100.4I(EFE+SID0)Proton Good      none0

TB 20.6.21

Start 16:46
0cm Phantom thickness
Mean rate O(MHz)
reference run without phantom
for live TOF estimation: TDC3,channel 9 - TDC2,channel9
 

  240   Sun Jun 20 19:58:31 2021 Felix Ulrich-PurHADES sandwich TOF13HADES-LGADs+PMMAslabs100.4I(EFE+SID0)Proton Good      PMMA0

TB 20.6.21

Start 17:27
3cm Phantom thickness
Mean rate O(MHz)
for live TOF estimation: TDC3,channel 9 - TDC2,channel9
 

  241   Sun Jun 20 19:59:31 2021 Felix Ulrich-PurHADES sandwich TOF14HADES-LGADs+PMMAslabs100.4I(EFE+SID0)Proton Good      PMMA0

TB 20.6.21

Start 18:03
1cm Phantom thickness
Mean rate O(MHz)
for live TOF estimation: TDC3,channel 9 - TDC2,channel9

last sensor stopped working
 

  242   Sun Jun 20 20:00:05 2021 Felix Ulrich-PurHADES testrun 800MeV16HADES-LGADs800VIIProton Good      none0

TB 20.6.21

Start 19:19
Mean rate O(MHz)
 

  243   Sun Jun 20 20:02:03 2021 Felix Ulrich-PurHADES sandwich TOF15HADES-LGADs+PMMAslabs100.4I(EFE+SID0)Proton Good      PMMA0

TB 20.6.21

Start 18:45
2cm Phantom thickness
Mean rate O(MHz)
for live TOF estimation: TDC3,channel 9 - TDC2,channel9

last sensor did not work

  245   Sat Sep 18 06:20:51 2021 Manuel ChristanellPad Sensoren10 62.4III(EFE+SID2)Proton          

01. SiC; 2. Si

Bias 1: 400V; Bias 2: -100 V; SiC with Cividec

  246   Sat Sep 18 07:22:07 2021 Manuel ChristanellPad Sensoren11SiC+Si62.4III(EFE+SID2)Proton          

01. SiC; 2. Si

Small SiC Signal;
Cividec for SiC

  247   Thu Oct 7 10:51:38 2021 Philipp GagglPad Sensoren12SiC+Si62.4III(EFE+SID2)Proton Good        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 400 V
Cividec for SiC

  248   Thu Oct 7 10:54:33 2021 Philipp GagglPad Sensoren13SiC+Si62.4II(BETA+EFE)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 400 V

  249   Thu Oct 7 10:56:59 2021 Philipp GagglPad Sensoren14SiC+Si62.4II(BETA+EFE)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 400 V
Repeat of run 13

  250   Thu Oct 7 10:57:31 2021 Philipp GagglPad Sensoren15SiC+Si62.4II(BETA+EFE)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 800 V
Trigger SiC

  251   Thu Oct 7 10:58:19 2021 Philipp GagglPad Sensoren16SiC+Si62.4II(BETA+EFE)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 1000 V
Trigger SiC

  252   Thu Oct 7 10:58:47 2021 Philipp GagglPad Sensoren17SiC+Si62.4II(BETA+EFE)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 1100 V
Trigger SiC

  253   Thu Oct 7 10:59:18 2021 Philipp GagglPad Sensoren18SiC+Si62.4II(BETA+EFE)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 400 V

  254   Thu Oct 7 10:59:57 2021 Philipp GagglPad Sensoren19SiC+Si62.4II(BETA+EFE)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 600 V

  255   Thu Oct 7 11:00:33 2021 Philipp GagglPad Sensoren20SiC+Si62.4I(EFE+SID0)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 1100 V

  256   Thu Oct 7 11:01:19 2021 Philipp GagglPad Sensoren21SiC+Si62.4I(EFE+SID0)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 800 V

  257   Thu Oct 7 11:01:53 2021 Philipp GagglPad Sensoren22SiC+Si62.4I(EFE+SID0)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 600 V

  258   Thu Oct 7 11:02:15 2021 Philipp GagglPad Sensoren23SiC+Si100.4I(EFE+SID0)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 600 V

  259   Thu Oct 7 11:02:43 2021 Philipp GagglPad Sensoren24SiC+Si100.4I(EFE+SID0)Proton Unknown        

beamtime on 18.09.2021
CH1: SiC
CH3: Si
Bias_Si: -100 V
Bias_SiC: 800 V

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