beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1100 V
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 800 V
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 600 V
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 400 V
beamtime on 18.09.2021 CH1: SiC CH3: Si Bias_Si: -100 V Bias_SiC: 1100 V Noise measurement
Start: 06:33 O(kHz)
Start: 06:40 O(100kHz)
Start: 06:46 O(MHz)
Start: 06:54 O(MHz)
Start: 07:01 O(MHz)
Start: 07:07 O(MHz)
Start: 07:13 O(100kHz)
Start: 07:20 O(100kHz)